The aging of tungsten filaments and its effect on wire surface kinetics in hot-wire chemical vapor deposition
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چکیده
منابع مشابه
Gas phase and surface kinetic processes in polycrystalline silicon hot-wire chemical vapor deposition
Experiments and numerical simulations have been conducted to determine critical parameters for growth of polycrystalline silicon via hot-wire chemical vapor deposition. Reactor-scale simulations performed using the Direct Simulation Monte Carlo (DSMC) method have revealed a number of important phenomena such as a sharp drop of 1700 K in the gas temperature from the wire to substrate. The gas-ph...
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We apply a rate-equation pair binding model of nucleation kinetics to the nucleation of Si islands grown by hot wire chemical vapor deposition on SiO substrates. The grain size of poly-Si films increases with H dilution, which is attributed to atomic H 2 2 etching of Si monomers rather than stable Si clusters during the early stages of nucleation. The nucleation density increases sublinearly wi...
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We investigate low-temperature epitaxial growth of thin silicon films by HWCVD on Si w1 0 0x substrates and polycrystalline template layers formed by selective nucleation and solid phase epitaxy (SNSPE). We have grown 300-nm thick epitaxial layers at 300 8C on silicon w1 0 0x substrates using a high H :SiH ratio of 70:1. Transmission electron microscopy confirms that the 2 4 films are epitaxial...
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Hot-wire chemical vapor deposition is a promising technique for deposition of thin amorphous, polycrystalline, and epitaxial silicon films for photovoltaic applications. Fundamental questions remain, however, about the gas-phase and surface-kinetic processes involved. To this end, the nature of the wire decomposition process has been studied in detail by use of mass spectrometry. Atomic silicon...
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Available online 23 January 2009
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2002
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1504172